[1]施洪亮,罗德伟,王佳佳,等.SiC-MOSFET 开关模块RC缓冲吸收电路的参数优化设计[J].控制与信息技术,2021,(02):61-66.[doi:10.13889/j.issn.2096-5427.2021.02.010]
 SHI Hongliang,LUO Dewei,WANG Jiajia,et al.Optimized Parameter Design of RC Snubber Circuit forSiC-MOSFET Module[J].High Power Converter Technology,2021,(02):61-66.[doi:10.13889/j.issn.2096-5427.2021.02.010]
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SiC-MOSFET 开关模块RC缓冲吸收电路的参数优化设计()
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《控制与信息技术》[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2021年02期
页码:
61-66
栏目:
电力与传动控制
出版日期:
2021-04-05

文章信息/Info

Title:
Optimized Parameter Design of RC Snubber Circuit forSiC-MOSFET Module
文章编号:
2096-5427(2021)02-0061-06
作者:
施洪亮罗德伟王佳佳谭 渺杨 奎周 帅饶沛南
(株洲中车时代电气股份有限公司,湖南株洲 412001)
Author(s):
SHI Hongliang LUO Dewei WANG Jiajia TAN Miao YANG Kui ZHOU Shuai RAO Peinan
( Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China )
关键词:
SiCRC缓冲吸收双脉冲寄生参数电压尖峰优化设计
Keywords:
SiC RC snubber double pulse parasitic parameters spike voltage optimal design
分类号:
TN35
DOI:
10.13889/j.issn.2096-5427.2021.02.010
文献标志码:
A
摘要:
针对SiC-MOSFET开关模块开关速度快、开关电压尖峰高、缓冲吸收电路参数难以确定的问题,文章提出一种RC缓冲吸收电路参数快速优化设计方法。该方法基于包含寄生参数的电路分析模型并利用双脉冲电路,通过不同的缓冲吸收电路参数曲线来确定电路参数的优化区间并选取最优的缓冲吸收电路参数。仿真和实验结果表明,采用该方法能够针对SiC-MOSFET开关模块关断尖峰电压和缓冲吸收电路总损耗快速设计出满足要求的电路参数,使关断尖峰电压和缓冲吸收电路损耗处于系统优化的最佳区间。
Abstract:
This paper proposes a fast optimization design method for RC snubber circuit parameters in order to solve the high switching voltage spikes of SiC while high switching and difficulties in snubber circuit parameters. This method is based on the circuit analysis model of double-pulse circuit including parasitic parameters. Different snubber parameter curves are used to determine the optimal interval of circuit parameters and select the best snubber parameters. The simulation and experimental results show that the method can quickly optimize the design of the circuit parameters that meet the requirements for the turn-off voltage spike of SiC switching devices and the total loss of the snubber circuit, and the spike voltage and the loss of the snubber circuits are in the optimal range for system optimization.

参考文献/References:

[1] 汪晓文,康婷,康端刚,等.开关电源的输入滤波器设计及传导干扰抑制[J].电源技术, 2020, 44(12): 1822-1825, 1830.

WANG X W, KANG T, KANG D G, et al. [J]. Chinese Journal of Power Sources, 2020, 44(12): 1822-1825, 1830.
[2] 曾正,余跃,欧开鸿,等.探头影响SiC MOSFET MOSFET暂态稳定的阻抗建模[J].中国电机工程学报, 2020, 40(9): 2983-2996.
ZENG Z, YU Y, OU K H, et al. Impedance-based Transient Stability Modeling of SiC Influenced by Probes[J]. Proceedings of the CSEE, 2020, 40(9): 2983-2996.
[3] 刘皓. 有轨电车全SiC辅助变流器设计与研究[D].北京:北京交通大学, 2018.
LIU H. Design and research of full SIC auxiliary converter for trams[D]. Beijing: Beijing Jiaotong University, 2018.
[4] 李辉,廖兴林,肖洪伟,等.基于SiC MOSFET直流固态断路器关断初期电压尖峰抑制方法[J].电工技术学报, 2018, 33(5): 1058-1067.
LI H, LIAO X L, XIAO H W, et al. Voltage Overshoot Suppression Method of SiC MOSFET-Based DC Solid-State Circuit Breaker at Turn-Off Initial Stage[J]. Transactions of China Electrotechnical Society, 2018, 33(5): 1058-1067.
[5] 肖洪伟. 基于SiC MOSFET的固态直流断路器的设计与实现[D].重庆:重庆大学, 2017.
XIAO H W. Design and implementation of solid state DC circuit breaker based on SiC MOSFET[D]. Chongqing: Chongqing University, 2017.
[6] 史孟. SiC MOSFET器件模块特性及其在感应加热电源中的应用研究[D].保定:华北电力大学, 2017.
SHI M. Research on the characteristics of SiC MOSFET and applications in induction heating power supply[D]. Baoding: North China Electric Power University, 2017.
[7] 杨淼.基于Saber的IGBT逆变桥无损缓冲电路的仿真分析[J].中国新通信, 2015, 17(2): 108-110.
YANG M. Design of a passive loseless snubber for IGBT inverters based on Saber[J]. China New Telecommunications, 2015, 17(2): 108-110.
[8] FRITZ N, ENGELMANN G ,DE DONCKER R W. RC Snubber Design Procedure for Enhanced Oscillation Damping in Wide-Bandgap Switching Cells[C]//2019 21st European Conference on Power Electronics and Applications (EPE ’19 ECCE Europe), Genova, Italy: IEEE, 2019.
[9] CHEN Z, RICE J, SHAO J W, et al. Optimal DC-Link RC Snubber Design for SiC MOSFET Applications[C]//2019 IEEE Energy Conversion Congress and Exposition (ECCE), Baltimore, MD, USA: IEEE, 2019.
[10] MOREIRA A C, PICCOLI D C, OLIVEIRA J C L D, et al. Comparative study of RC snubber configurations in switching circuits[C]//2019 IEEE 15th Brazilian Power Electronics Conference and 5th IEEE Southern Power Electronics Conference (COBEP/SPEC), Santos, Brazil: IEEE, 2019.
[11] 王海超,范学鑫,杨国润,等.三电平移相全桥变换器整流二极管RC吸收参数多目标优化设计[J].高电压技术, 2021, 47(1): 159-168.
WANG H C, FAN X X, YANG G R, et al. Multi-objective Optimization Design of RC Snubber of Rectifier Diodes for Three-level Phase-shifted Full-bridge Converter[J]. High Voltage Engineering, 2021, 47(1): 159-168.
[12] 王玲,成建兵,陈明,等. 一种集成RC吸收器的低EMI分离栅VDMOS[J]. 微电子学, 2020, 50(5): 720-725.
WANG L, CHENG J B, CHEN M, et al. A Spilt-Gate VDMOS with Integrated RC Snubber for Low EMI[J]. Microelectronics, 2020, 50(5): 720-725.
[13] VACUILK P. The experience with SiC MOSFET and BUCK converter snubber design[J]. World Academy of Science, Engineering and Technology International Journal of Energy and Power Engineering, 2014, 8(1): 49-54.

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备注/Memo

备注/Memo:
收稿日期:2021-01-13
作者简介:施洪亮(1983—),男,博士,工程师,研究方向为基于SiC模块的高频大功率变流器设计以及磁性器件优化设计研究。
更新日期/Last Update: 2021-05-06